You have requested Quote for Part Number 21049369-101 with NSN 5962-01-358-2690 from Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor
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Part Number: 21049369-101
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Alternate P/N: 21049369101
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Manufacturer: Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor
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NSN: 5962-01-358-2690
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Item Name : Microcircuit Memory
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CAGE Code: 81395
Part number 21049369-101 is now available in our ready-to-ship inventory. The unique NSN for this part is 5962013582690. This part is Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Would you like to receive a quick quote for 21049369-101 part? Fill out the form to get started.
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NSN Information for Part Number 21049369-101 with NSN 5962-01-358-2690, 5962013582690
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-358-2690 Item Description: Microcircuit Memory | 5962 | 013582690 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
21049369-101 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-358-2690, 5962013582690
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAT | BODY WIDTH0 290 INCHES MINIMUM AND 0 320 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND WCLOCK |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC60 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY600 GATE EPLD |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PASCAL INDUSTRIAL LIGHT TANK STOCK AND 20 00 OUTPUT PASCAL INDUSTRIAL LIGHT TANK STOCK |
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