You have requested Quote for Part Number 1280PALC22V10-2 with NSN 5962-01-371-1421 from Bae Systems Information And Electronic Systems Integration I
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Part Number: 1280PALC22V10-2
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Alternate P/N: 1280PALC22V102
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Manufacturer: Bae Systems Information And Electronic Systems Integration I
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NSN: 5962-01-371-1421
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Item Name : Microcircuit Memory
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CAGE Code: 72314
Part number 1280PALC22V10-2 is now available in our ready-to-ship inventory. The unique NSN for this part is 5962013711421. This part is Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration I. Would you like to receive a quick quote for 1280PALC22V10-2 part? Fill out the form to get started.
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NSN Information for Part Number 1280PALC22V10-2 with NSN 5962-01-371-1421, 5962013711421
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-371-1421 Item Description: Microcircuit Memory | 5962 | 013711421 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1280palc22v10-2 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-371-1421, 5962013711421
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | ZZZX | DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDCOMPATIBLE CMOS AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT |
| MEMORY | ZZZP | PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-2 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314 |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD |
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